http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101478812-B1

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filingDate 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101478812-B1
titleOfInvention SOI substrate manufacturing method and semiconductor device manufacturing method
abstract Thereby suppressing the influence of metal contamination that occurs during manufacturing of the SOI substrate. The semiconductor substrate is irradiated with hydrogen ions to form a damaged region, and then the base substrate and the semiconductor substrate are bonded. A heat treatment is performed to cleave the semiconductor substrate to produce an SOI substrate. A gettering site layer made of a semiconductor containing a Group 18 element of the periodic table such as Ar is formed on the semiconductor layer of the SOI substrate. A heat treatment is performed to getter the metal elements in the semiconductor layer to the gettering site layer. The gettering site layer is removed by etching to thin the semiconductor layer.n n n n SOI substrate, base substrate, semiconductor substrate, source gas, plasma, hydrogen ion, damage region, junction layer, gettering site
priorityDate 2007-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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