http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101471621-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2013-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53c7e7215fa62d189ac58ac1de11e2e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ca7194be7b84190df477cfefbdbccc8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39b252390130a3a85256f28e00e670f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8af879405351c8f48b2e8d69ec3af5ff |
| publicationDate | 2014-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101471621-B1 |
| titleOfInvention | Separation method of GaN substrate using wet etching |
| abstract | A method for separating a GaN substrate by wet etching is provided. Forming an n-GaN pillar in a space between the oxide film and the oxide film, which are located on the substrate, using a chemical lift-off method of the GaN substrate technology; Forming an n-GaN layer covering the oxide film and an upper space of the n-GaN pillar; Forming an active layer, p-GaN, and a p-type electrode on the n-GaN layer in this order; And removing the oxide film and wet etching the n-GaN pillar to separate the substrate. The present invention also provides a method of separating a GaN substrate by wet etching. According to the present invention, it is possible to reduce manufacturing costs by improving the quality of GaN epitaxial growth and simple processes. In addition, it is possible to provide a GaN substrate separation method capable of improving the light emitting area and increasing the light extraction efficiency. |
| priorityDate | 2013-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.