http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101470396-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2013-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101470396-B1 |
| titleOfInvention | Method of manufacturing epitaxial silicon wafer and epitaxial silicon wafer manufactured by the method |
| abstract | A method of manufacturing an epitaxial silicon wafer on which an epitaxial film is formed on a surface of a silicon wafer to which phosphorus is added, the method comprising the steps of: determining, based on the in-plane resistance distribution of the silicon wafer before the epitaxial growth treatment, Adjust the distribution. |
| priorityDate | 2012-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.