| abstract |
The method includes the step of applying a final in-situ etching material 34 to the substrate 10 during processing so that the final in-situ etching material 34 at least partially covers the integrated first micro-contacts 32 in the substrate 10 , Projecting upwardly from the surface (18) of the substrate and etching the surface of the substrate (10) so as to leave a second micro contact (36) underlying and integrated with the first micro contact (32) Wherein the final in-line etch material 34 at least partially protects the first micro-contacts 32 from etching during further etching steps. The micro-electronic unit includes a substrate 10, Each of the micro-contacts includes a base region adjacent to the substrate and a tip region remote from the substrate, each of the micro- of The micro-contacts 38 have a horizontal dimension which is a first function of the vertical position in the base region 42 and a second function of the vertical position in the tip region 32. |