http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101459725-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_855c27b411476b0213aec70005148c8c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-261 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7418906e33b795c563212885d03abd4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f9db59236fb1fa400450bf5ae296ced http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_febce4a19cc7c5d3d00d1904f2541855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e055eee09ac2a5c248a9c162c686498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3329de240237dbb7b501858f19cdc84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b54e49fd38d4a73d62e42f203d8c33c3 |
| publicationDate | 2014-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101459725-B1 |
| titleOfInvention | Stripper composition for removing post-etch residues and photoresist etch polymer |
| abstract | The present invention relates to a stripper composition for removing post-etch photoresist etch polymers and organic or metallic residues used in semiconductor manufacturing processes, and more particularly to a stripper composition for removing amine-based compounds a post-etch photoresist etch polymer comprising an amine compound, a fluorine compound, a chelating agent, a fluorosurfactant and a residual water, and a stripper composition for removing residues . The post-etching photoresist etching polymer and the stripper composition for removing residues according to the present invention can control the pH by the fluorine-based compound and the amine compound and the etching rate of the wafer surface. By using the fluorine-based surfactant, The chemical stability and wettability of the stripper composition can be improved to improve the permeability of the stripper composition, and the amount of bubbles to be generated and the time for defoaming can be reduced to improve the etching uniformity. In addition, by adding a fluorine buffer solution and replenishing fluorine ions lost during the process, the bath life time is improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110192152-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023003215-A1 |
| priorityDate | 2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 163.