http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101451103-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101451103-B1 |
| titleOfInvention | Method for manufacturing thin film semiconductor device |
| abstract | It is possible to lower the fixed charge and the interfacial level in the film in the gate insulating film without increasing the film thickness of the gate insulating film under the semiconductor thin film serving as the active layer without increasing the process order. A method for manufacturing a thin film semiconductor device is provided. A gate electrode is formed on a substrate, and a gate insulating film made of a silicon oxynitride film is formed on the substrate while covering the gate electrode. The semiconductor thin film is formed on the gate insulating film and then modified by bonding oxygen to the oxygen vacancies in the oxynitride film constituting the gate insulating film by heat treatment in an oxidizing atmosphere containing oxygen. This heat treatment is performed in a pressurized steam atmosphere. In this heat treatment, a thermal oxide film is grown on the surface layer of the semiconductor thin film.n n n n A gate insulating film, a fixed charge, an interface level, a bottom gate type TFT |
| priorityDate | 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.