| abstract |
The present invention relates to a thin film transistor and a manufacturing method thereof, a substrate, a gate electrode disposed on the substrate, a gate insulating film disposed on the substrate and the gate electrode, a semiconductor as a channel layer disposed on the gate insulating film, and the semiconductor It includes a source electrode and a drain electrode disposed on the left and right center, the gate insulating film is made of SiOC, the dielectric constant of the gate insulating film is characterized in that 1.3 to 2.0. |