http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101449401-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2010-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101449401-B1 |
| titleOfInvention | Quantum-well-based semiconductor devices |
| abstract | A quantum well based semiconductor device and a method of forming a quantum well based semiconductor device are described. The method includes providing a heterostructure disposed on a substrate and including a quantum well channel region. The method also includes forming a source and drain material region over the quantum well channel region. The method also includes forming a trench in the source and drain material regions to provide a source region that is separate from the drain region. The method also includes forming a gate dielectric layer in the trench between the source and drain regions and forming a gate electrode in the trench above the gate dielectric layer. |
| priorityDate | 2009-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.