http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101447938-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101447938-B1 |
| titleOfInvention | Semiconductor substrate and manufacturing method of thin film transistor |
| abstract | In the production of the SOI substrate, when there is a step on the surface to be bonded, the substrate on the opposite side is bent due to the step at the time of bonding, so that the contact area becomes small, and the SOI layer of the desired shape may not be obtained . It is an object of the present invention to obtain an SOI substrate having a desired shape even when there is a step on the surface to be bonded with the SOI substrate. By forming the dummy patterns 302 at predetermined intervals between the steps of the surfaces to be bonded, warpage of the substrate to be bonded is reduced, adhesion between the substrates is secured, and a desired SOI layer is obtained.n n n n A semiconductor substrate, a thin film transistor, a pattern for element formation, a dummy pattern |
| priorityDate | 2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.