http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101437081-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-383 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101437081-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | It is an object to provide a semiconductor device using an oxide semiconductor with stable electrical characteristics and high reliability. A first insulating film is formed and an oxide semiconductor film electrically connected to the source electrode and the drain electrode and the source electrode and the drain electrode is formed on the first insulating film and heat treatment is performed on the oxide semiconductor film to form hydrogen atoms And an oxygen doping treatment is performed on the oxide semiconductor film from which hydrogen atoms have been removed to supply oxygen atoms into the oxide semiconductor film to form a second insulating film on the oxide semiconductor film to which oxygen atoms have been supplied, And forming a gate electrode in a region overlapping with the film. |
| priorityDate | 2010-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.