http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101436115-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2008-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101436115-B1 |
| titleOfInvention | Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device |
| abstract | In the step of forming the single crystal semiconductor layer bonded to the glass substrate by the low temperature heat treatment, the glass substrate to which the single crystal semiconductor layer is bonded is heated to a temperature higher than the heating temperature of the heat treatment in the joining peeling step Leave. The single crystal semiconductor layer is heated to a temperature in the vicinity of the strain point of the glass substrate, specifically, in the range of the strain point +/- 50 DEG C, in the step of bonding with the glass substrate. Therefore, the glass substrate is subjected to the heat treatment at a temperature higher than the temperature in the vicinity of the deformation point, specifically, in the range of the strain point +/- 50 占 폚.n n n n Semiconductor device, single crystal semiconductor substrate, separation layer, organosilane gas, heat treatment |
| priorityDate | 2007-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 203.