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filingDate 2008-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101433899-B1
titleOfInvention METHOD FOR FORMING METAL LAYER OF SUBSTRATE ETCHING AND SUBSTRATE AND STRUCTURE HAVING METAL LAYER USED THEREFOR
abstract The present invention provides a method of forming a metal layer in an etched portion of a substrate. Specifically, a method of forming a metal layer in an etched portion of a substrate includes: forming an etched portion having a vertical surface by etching the substrate; forming a diffusion material layer on a surface of the etched portion; Forming a seed layer diffused below the surface of the etch, and forming a metal layer on the seed layer. According to the above-described method, since the surface characteristics of the substrate etching portion are improved by the seed layer, a metal layer having excellent adhesion and a uniform thickness can be formed on the vertical surface of the etching portion.n n n n Substrate, etch, metal layer, scallop, DRIE, heat treatment, diffusion
priorityDate 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 37.