http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101432908-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101432908-B1 |
| titleOfInvention | Semiconductor substrate and method of manufacturing a semiconductor device having the same |
| abstract | The semiconductor substrate includes a non-conductive semiconductor layer disposed on a growth substrate, a conductive semiconductor layer disposed on the non-conductive semiconductor layer, and a non-conductive semiconductor layer disposed under the non-conductive semiconductor layer, And a stress control layer disposed in one of the layers. The stress control layer includes a plurality of nitride semiconductor layers including at least Al. |
| priorityDate | 2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.