http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101431372-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101431372-B1 |
| titleOfInvention | Methods and apparatus for via last through-vias |
| abstract | A method for forming via via through vias. The method includes the steps of: providing an active device wafer having a back surface having a conductive interconnect material disposed in a dielectric layer and having an opposite back surface; Providing a carrier wafer having through vias filled with oxide extending from a first surface of the carrier wafer to a second surface of the carrier wafer; Bonding a second surface of the carrier wafer to the front surface of the active device wafer; Etching the oxide of the through vias of the carrier wafer to form oxide through vias; And depositing a conductive material within the oxide via vias to electrically connect the conductive interconnect material and form a conductor extending into the active device wafer. The apparatus includes a carrier wafer having an oxide through vias extending through the carrier wafer to an active device wafer bonded to the carrier wafer. |
| priorityDate | 2012-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.