http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101424870-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101424870-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device capable of high-speed operation and capable of reducing power consumption is provided. A semiconductor device comprising a transistor having an oxide semiconductor, the oxide semiconductor film having a small current when the gate voltage is negative and the oxide semiconductor film having a high electric field mobility and a large on-current, It is different. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having a high electric field effect mobility and a large on-current is lower than that of the oxide semiconductor film having a small current when the gate voltage is negative. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763281-B2 |
| priorityDate | 2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.