http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101421665-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101421665-B1 |
| titleOfInvention | Method of forming substrate-through interconnections |
| abstract | In one embodiment of the method of forming at least one through-substrate interconnect, a semiconductor substrate 200 is provided having a first surface 202 and a second surface 204 opposite . At least one opening 210 is formed in the semiconductor substrate so as to extend from the first surface to the intermediate depth in the semiconductor substrate. The at least one opening is defined in part by a base (216). At least one metal-catalyst nanoparticle 220 is provided on the base. A conductive material is deposited in the at least one opening under conditions that facilitate metal-catalyst nanoparticle deposition of the conductive material (222). The material of the semiconductor substrate may be removed from the second surface to expose a portion of the conductive material filling the at least one opening (Figure 3K). In another embodiment, a conductive material may be selected to selectively deposit on the base that does not use nanoparticles, but defines the at least one opening.n n n n Semiconductor device, substrate-through interconnect, openings, side walls, metal-catalyzed nanoparticles |
| priorityDate | 2007-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.