http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101420600-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101420600-B1 |
| titleOfInvention | Semiconductor device |
| abstract | It is an object of the present invention to realize miniaturization and high performance of a field effect transistor formed on a substrate having an insulating surface. In particular, the object of the present invention is to realize miniaturization and high performance of a thin film transistor in which a channel forming region is formed in a semiconductor layer crystallized by irradiating heat or light energy to a semiconductor having an amorphous structure. n A semiconductor device having a so-called SOI structure in which an element is constituted by a semiconductor layer on an insulating surface, the semiconductor layer is composed of a semiconductor layer having a thickness of 5 nm to 30 nm and extremely thin. Wherein the semiconductor layer has a gate insulating layer with a thickness of 2 nm to 20 nm and a gate electrode, and the channel length is 10 times or more and less than 40 times the thickness of the semiconductor layer. By making the semiconductor layer thinner, it acts to make it difficult to be influenced by the concentration of one conductivity type impurity added to the channel forming region. n n An insulating surface, a substrate, a field effect transistor, a semiconductor layer, an amorphous structure |
| priorityDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.