| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C12Y208-02009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-34 |
| filingDate |
2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101417656-B1 |
| titleOfInvention |
Rinsing agent for lithography, method for forming a resist pattern, and method for producing a semiconductor device |
| abstract |
The present invention provides a lithographic rinse agent and the like capable of suppressing resist pattern collapse in rinsing after development in resist pattern formation and improving LWR without unduly fluctuating the resist pattern size. The solving means of the present invention is a lithographic rinse agent containing at least a linear alkane diol having 6 to 8 carbon atoms and water. |
| priorityDate |
2012-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |