http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101417246-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07J9-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C49-423 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C49-423 |
filingDate | 2012-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101417246-B1 |
titleOfInvention | Chemically amplified positive resist composition, patterning process, and acid-decomposable keto ester compound |
abstract | The present invention relates to a positive-type chemically amplified resist material represented by the general formula (1) and containing one or more acid-decomposable keto ester compounds having steroid skeleton which is insoluble in an alkali developing solution and is soluble in an alkali developer under the action of an acid . ≪ Formula 1 > (Wherein R 1 represents an acid labile group in which the sum of the number of carbon atoms and the number of oxygen atoms is 6 to 20, and -COOR 1 is decomposed by the action of an acid to generate a carboxyl group, and each X independently represents a carbonyl group (-CO-) Or a methylene group (-CH 2 -), each Y independently represents a single bond or an alkylene group having 1 to 6 carbon atoms, and n is an integer of 0 to 2) The positive chemically amplified resist material of the present invention provides high resolution and good LER (pattern line edge roughness), and is useful for fine processing using electron beams, far ultraviolet rays, extreme ultraviolet rays, and the like. |
priorityDate | 2011-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 270.