http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101407988-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101407988-B1 |
| titleOfInvention | Etching solution, and method for processing surface of silicon substrate |
| abstract | There is provided an etching solution capable of stably forming a silicon substrate having irregularities (texture structure) in a fine pyramid shape without using a conventional etching inhibitor such as isopropyl alcohol. An etching solution for immersing a silicon substrate and forming pyramid-shaped irregularities on the surface of the substrate, comprising: at least one compound (A) represented by the following formula (1) or an alkali salt thereof; % Or less of alkali metal hydroxide (B). (Formula 1) (Wherein R represents any one of an alkyl group, an alkenyl group and an alkynyl group having 4 to 15 carbon atoms, and X represents a sulfonic acid group.) By using this etching solution, a fine texture structure can be formed on the surface of the silicon substrate. |
| priorityDate | 2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.