http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101402189-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-467 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101402189-B1 |
| titleOfInvention | Zn oxide thin film transistor and etching solution of Zn oxide |
| abstract | The present invention relates to a Zn oxide-based thin film transistor and an etching solution of Zn oxide. A thin film transistor comprising: a gate; a channel formed of Zn oxide at a position corresponding to the gate; a gate insulator formed between the gate and the channel; and a source and a drain formed in contact with both sides of the channel, A Zn oxide-based thin film transistor including an embedded portion formed in a channel between the substrate and a Zn oxide etching solution for forming the depressed portion. |
| priorityDate | 2007-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.