http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101390425-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-481 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2007-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101390425-B1 |
| titleOfInvention | Temperature controlled purge gate valve for chemical vapor deposition chamber |
| abstract | The present invention relates to methods and apparatus optimized for manufacturing 3-N (N) compound semiconductor wafers and in particular GaN wafers. In particular, the method substantially prevents the formation of undesired material on an isolation valve fixture in a chemical vapor deposition (CVD) reactor. Particularly, the present invention relates to a method for producing a single crystal III-V group semiconductor material by reacting a predetermined amount of gaseous precursor in the reaction chamber as a reactant with a certain amount of Group 5 elements in a gaseous state as another reactant isolated which provides apparatus and method for limiting the reaction of the deposition / condensation and by-products of the GaCl 3 on the valve. n n Gate Valve, CVD, Mass Production, HVM, Reaction Chamber, Group 3, Group 5, Precision |
| priorityDate | 2006-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.