http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101390349-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate 2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101390349-B1
titleOfInvention Amorphous carbon film, method of forming the same, and method of manufacturing a semiconductor device using the same
abstract The present invention relates to an amorphous carbon film, a method of forming the same, and a method of manufacturing a semiconductor device using the amorphous carbon film.n n n The amorphous carbon film according to the present invention can be formed by introducing an inert gas and a source gas into a chamber, exciting a plasma, stopping the flow of an inert gas, forming an amorphous carbon film with only a source gas, Is formed using a source gas having a single bond (CC) and a vaporized liquid hydrocarbon compound having at least one double bond (C = C).n n n According to the present invention, it is possible to prevent the refractive index and the extinction coefficient of the amorphous carbon film from increasing when the inert gas is continuously introduced into the amorphous carbon film when the amorphous carbon film is formed, thereby improving the reliability of the photolithography process. The reliability of the semiconductor device using the carbon film as the hard mask film can be improved.n n n n Amorphous carbon film, refractive index, extinction coefficient, inert gas, cyclic, single bond, double bond
priorityDate 2007-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004282064-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11605
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527710
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452467202
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7612
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID12343
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5367249
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526326
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419595372
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11000
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5367250
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID407967434
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545604
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID138950
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8882
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526444
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15550
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8079
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID408978602
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419574783
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526290
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8135
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523671
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID19969
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419574782

Total number of triples: 40.