http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101384430-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-2665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B09B3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101384430-B1 |
| titleOfInvention | Epitaxial reactor and temperature sensing device of epitaxial reactor |
| abstract | An epitaxial reactor according to the present invention includes a component for heating the inside of a chamber; A reaction gas supply unit supplying a reaction gas into the chamber; A component for controlling the flow of the reaction gas with respect to the inside of the chamber; And a temperature sensing device for measuring a temperature inside the chamber, wherein the temperature sensing device includes a temperature sensing rod; And a rod cover for protecting the temperature sensing rod against the reaction gas, wherein the rod cover further protrudes outward from the temperature sensing rod. By preventing abnormal growth of silicon on the outer surface of the quartz rod according to the present invention, it is possible to accurately grasp the temperature state inside the chamber, thereby improving the quality of the epitaxial thin film and improving the use efficiency of the epitaxial reactor. Can be. |
| priorityDate | 2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.