http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101374090-B1

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filingDate 2008-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101374090-B1
titleOfInvention Epitaxy Methods and Templates Grown by the Methods
abstract The present invention provides methods for producing a substantially continuous layer of Group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include seeding and / or epitaxy growth agglomeration over the upper portions of the plurality of pillars / islands of irregularly arranged Group III nitride material over the template structure. The upper portions of the islands have a low defect density and optionally have a selected crystal polarity. The present invention also includes template structures having a substantially continuous layer of masking material through which the upper portions of the pillars / islands are exposed. The present invention can be applied to a wide range of single element and compound semiconductor materials.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11735480-B2
priorityDate 2007-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 39.