http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101367455-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2009-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101367455-B1 |
| titleOfInvention | How to form a double pattern |
| abstract | The present invention is applied to a chemically amplified positive resist composition on a substrate, a step of forming a resist film, a step of obtaining a first positive pattern on the film, and a composition for inverting film formation on the positive pattern. A step of imparting resistance to the organic solvent to be formed, a step of forming an inverted film with a second chemically amplified positive resist material, and obtaining a second positive pattern on the film, and further obtaining a second positive resist pattern In the developing solution step, there is provided a double pattern forming method comprising a step of dissolving and inverting and transferring the first positive pattern soluble and inverted into the alkaline developer in a step of obtaining a second pattern.n n n According to the present invention, even when the second resist film of the inversion film is formed using a hydroxyl group-containing solvent or a high polar solvent, the second resist material can be buried in the gap without damaging the first positive resist pattern. Alkali soluble removal of one positive type pattern can be carried out with a developing solution, and high-precision positive negative inversion can be performed by a simple process.n n n n Double pattern formation method, chemically amplified positive resist material, positive negative reversal, resistance to organic solvents |
| priorityDate | 2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 650.