http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101365673-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2006-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101365673-B1
titleOfInvention Thin film transistor, thin film transistor substrate comprising same and method for manufacturing same
abstract The present invention has excellent contact characteristics when contacted with ITO or IZO, and forms a first conductive pattern including a gate electrode and a second conductive pattern including a source electrode and a drain electrode without an etching process and improves the characteristics thereof. The present invention relates to a transistor, a thin film transistor substrate including the same, and a method of manufacturing the same.n n n To this end, the present invention is a gate electrode formed of a first conductive layer, a gate insulating film covering the gate electrode, a semiconductor layer for forming a channel on the gate insulating film;n n n A source electrode and a drain formed of an ohmic contact layer formed on the semiconductor layer and a second conductive layer containing nitrogen in an aluminum nickel-based alloy on the semiconductor layer and a third conductive layer containing aluminum and nickel on the second conductive layer. Provided is a thin film transistor including an electrode, and a thin film transistor substrate including the thin film transistor and a method of manufacturing the same.
priorityDate 2006-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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