| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-64 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
| filingDate |
2011-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101364338-B1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
One object of the present invention is to provide a semiconductor device including an oxide semiconductor that includes stable electrical properties and high reliability. Another object is to manufacture highly reliable semiconductor devices with high yields. In a staggered transistor having a top gate structure including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by using a film forming gas containing silicon fluoride and oxygen by plasma CVD. As the second gate insulating film laminated on the first gate insulating film, a silicon oxide film is formed by using a film forming gas containing silicon hydride and oxygen by plasma CVD. |
| priorityDate |
2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |