http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101364029-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f6f175f2c8eac40363953838045e7c40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2012-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24b4ac78faee09b83dee9ce81ffba4e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a797e57e755c7f7b630998262f7f8b06 |
| publicationDate | 2014-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101364029-B1 |
| titleOfInvention | Nitride semiconductor device and method for manufacturing the same |
| abstract | A nitride semiconductor device and a manufacturing method thereof are disclosed. Embodiments of the present invention may form a spacer using aluminum nitride, thereby minimizing a channel region in which electron concentration is reduced, and compensating for a current reduction phenomenon generated when the normally off form is implemented. . That is, embodiments of the present invention reduce the current change in the two-dimensional electron gas channel, and increase the amount of current as a whole. Embodiments of the present invention may form a two-dimensional electron gas channel in a normally off shape using p-type nitride. The embodiments of the present invention can maintain the threshold voltage (positive voltage) while maintaining the positive amount of the current of the two-dimensional electron gas channel by growing aluminum nitride only in the region except the lower region of the gate electrode. And a normally off device having a high threshold voltage can be manufactured. According to embodiments of the present invention, by selectively growing aluminum nitride under an aluminum gallium nitride barrier layer of a p-type nitride gate, a current amount and a threshold voltage of a two-dimensional electron gas channel may be adjusted according to the ungrown width. Can enhance the far off characteristics. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114497232-A |
| priorityDate | 2012-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.