http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101356107-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69ba1b09a9d7f6379ba43c57597becb7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D9-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D17-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-00 |
| filingDate | 2012-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d5e01f89717d0ce0421d2bfd7c41105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e895bbbb13512f5cfac81d0cc4e3754 |
| publicationDate | 2014-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101356107-B1 |
| titleOfInvention | Method for manufacturing silicon thin film using electrolytic method in non-aqueous electrolyte |
| abstract | The present invention relates to a method for producing a silicon thin film using an electrolytic method in a non-aqueous electrolyte. In the method of manufacturing a silicon thin film according to the present invention, it is possible to directly reduce the elemental silicon by the electrolytic method at low temperature (below 200 ℃) when manufacturing the silicon thin film, semiconductor or solar cell industry by simple process and electrolytic conditions change It is possible to manufacture a silicon thin film that can be utilized in the process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101630087-B1 |
| priorityDate | 2012-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.