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filingDate 2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101355538-B1
titleOfInvention Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
abstract Provided are a manufacturing method, a substrate processing method, a substrate processing apparatus, and a recording medium of a semiconductor device capable of forming a SiC-based film having appropriate characteristics in a low temperature region. A process of accommodating a substrate in a processing chamber, and supplying an organic silicon-based gas into the heated processing chamber to form a film containing silicon and carbon on the substrate, the process of forming a film containing the silicon and carbon Supplying the organic silicon gas into the processing chamber to seal the organic silicon gas into the processing chamber, and maintaining the state in which the organic silicon gas is sealed into the processing chamber for a predetermined number of times; And a step of evacuating the inside of the processing chamber.
priorityDate 2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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