http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101351711-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 |
| filingDate | 2006-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101351711-B1 |
| titleOfInvention | A method for low temperature deposition of ruthenium metal layers on a substrate, computer readable media and semiconductor devices |
| abstract | A low temperature chemical vapor deposition process for depositing low resistance ruthenium metal layers 440 and 460 that can be used as barrier / seed layers in Cu metallization techniques. The method 300 provides a process for providing substrates 25, 125 to the processing chambers 10, 110 of the deposition system 1, 100, and forming a processing gas containing ruthenium carbonyl precursor vapor and CO containing gas. And depositing the low-resistance ruthenium metal layers 440 and 460 on the substrates 25 and 125 by thermal chemical vapor deposition treatment by exposing the substrates 25 and 125 to a processing gas. (25, 125) is maintained at a temperature between about 100 ° C and about 300 ° C. A semiconductor device is provided that includes ruthenium metal layers 440, 460 formed in a patterned substrate 402, 404, 406, 408 having one or more vias or trenches 430.n n n n Chemical Vapor Deposition, Ruthenium Metal Layer, Ruthenium Carbonyl Precursor, Low Resistance |
| priorityDate | 2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.