http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101349604-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2007-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101349604-B1 |
| titleOfInvention | Gallium Nitride Light Emitting Device |
| abstract | The present invention provides a substrate, a first conductivity type lower gallium nitride semiconductor layer formed on the substrate, an MgN compound semiconductor layer formed on the first conductivity type lower gallium nitride semiconductor, and the MgN compound semiconductor layer. A nitride including a first conductive upper gallium nitride based semiconductor layer formed on the substrate, an active layer formed on the first conductive upper gallium nitride based semiconductor layer, and a second conductive gallium nitride based semiconductor layer formed on the active layer Provided is a gallium-based semiconductor light emitting device.n n n n MgN, gallium nitride (GaN), light emitting diode |
| priorityDate | 2007-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.