http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101348751-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2012-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101348751-B1 |
| titleOfInvention | Etch Liquid Composition of Indium Oxide |
| abstract | The etchant composition of the indium oxide film according to the present invention, sulfuric acid (H 2 SO 4 ) as the main oxidizing agent; Phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ), acetic acid (CH 3 COOH), perchloric acid (HClO 4 ), hydrogen peroxide (H 2 O 2 ), and peroxymonosulfate potassium (2KHSO 5 ), medium sulfur Compounds selected from triple salts including potassium acid (KHSO 4 ) and potassium sulfate (K 2 SO 4 ); Compounds containing ammonium (NH 4 + ) as an etch inhibitor; And water. When the etching liquid composition of the present invention is used, photoreaction materials such as photoresist and the like are not attacked during the etching process, and residues and the lower layer are not affected after the etching process. Therefore, productivity in manufacturing an electronic component substrate such as a display device is improved. Can be improved. |
| priorityDate | 2004-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.