http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101346966-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2603-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 2006-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101346966-B1 |
titleOfInvention | Copolymer for Semiconductor Lithography and Manufacturing Method Thereof |
abstract | (P) polymerizing one or more monomers providing the repeating unit (A), and coexistence of the acid and the monomer providing the repeating unit (A) -containing (co) polymer and / or repeating unit (A) At least one repeating unit (A) and a carboxyl group-containing repeating unit having a carboxylic ester structure whose solubility in alkali is increased by the action of an acid, obtained through step (Q) forming a repeating unit (B) under Copolymer for semiconductor lithography containing (B).n n n The copolymer is used in semiconductor production as a resist polymer having a low roughness, low development defects and excellent lithography characteristics such as DOF.n n n Copolymer for Semiconductor Lithography |
priorityDate | 2005-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 101.