http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101344629-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate | 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101344629-B1 |
| titleOfInvention | Selective etchant composition for silicon oxide film |
| abstract | The present invention is a composition for selective etching of a silicon oxide film used when a silicon oxide film and a nitride film or a titanium nitride film are simultaneously exposed on a wafer in a semiconductor manufacturing process, with respect to the total weight of the composition, ammonium fluoride (NH 4 F) It relates to an etching liquid composition comprising 1 to 40% by weight, 1 to 60% by weight of organic acid, and the remaining amount of water.n n n Ammonium fluoride, etching solution, etching, organic acid |
| priorityDate | 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.