http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101325452-B1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
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filingDate 2011-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101325452-B1
titleOfInvention Organic thin film transistor with DLC layer formed therein and method for manufacturing same
abstract One aspect of the present invention provides an organic thin film transistor comprising: a substrate; A gate electrode formed on the substrate; An insulating layer formed on the substrate and the gate electrode; A diamond like carbon (DLC) layer including a fluorine (F) group formed on the insulating layer; An organic semiconductor layer formed on the DLC layer including the fluorine (F) group and including a channel region, a source region and a drain region; A source electrode formed in contact with the source region; And a drain electrode formed in contact with the drain region. Another aspect of the present invention provides a method of manufacturing an organic thin film transistor, comprising: preparing a substrate; Forming a gate electrode on the substrate; Forming an insulating layer on the substrate and the gate electrode; Forming a diamond like carbon (DLC) layer including a fluorine (F) group on the insulating layer; Forming an organic semiconductor layer having a channel region, a source region, and a drain region on the DLC layer; And forming a source electrode and a drain electrode on the organic semiconductor.
priorityDate 2011-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 47.