http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101317091-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101317091-B1 |
| titleOfInvention | Semiconductor devices comprising double gate structures and methods of forming such semiconductor devices |
| abstract | Disclosed are a semiconductor device comprising a double gate structure and a method for forming such a semiconductor device. For example, a semiconductor device is disclosed that includes a first gate stack, which may include a first conductive gate structure formed from a first material, and a second gate stack, which may include a dielectric structure formed from an oxide of the first material. As another example, forming a high-K dielectric material layer over a semiconductor substrate, forming a first conductive material layer over the high-K dielectric material layer, and converting a portion of the first conductive material layer to a dielectric material layer. A method is also disclosed that includes oxidizing a portion of a conductive material layer and forming a second conductive material layer over both the conductive material layer and the dielectric material layer. |
| priorityDate | 2009-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.