http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101304723-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-5013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-343 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2006-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101304723-B1 |
| titleOfInvention | Photoresist stripping solution containing an amide compound and stripping method using the same |
| abstract | The present invention relates to a photoresist stripping solution containing an amide compound and a stripping method using the same. In particular, the amide compound in the stripping solution has both a hydrophilic group and a hydrophobic group, thereby lowering the surface tension of the stripping solution between the photoresist and the film. Not only facilitates the penetration of the stripping solution, but also has a chemical structure capable of chelating structure, so that the photoresist film cured after calcination, dry etching, high temperature ashing, and ion implantation in the semiconductor process and organic-inorganic The peeling effect of the polymer is excellent and the corrosion prevention role of the lower insulating film and metal film exposed to the peeling liquid is excellent. Therefore, it is effective in the application of highly integrated semiconductor device manufacturing processes such as LSI (high density integrated circuit) and VLSI (ultra large integrated circuit).n n n Amide compound, plasma etching, high temperature ashing, photoresist, polymer, corrosive, stripping solution |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160024573-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160024574-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210012018-A |
| priorityDate | 2006-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 116.