http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101301847-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0008 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2012-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101301847-B1 |
| titleOfInvention | Nitride-based light emitting diodes and method for manufacturing same |
| abstract | According to the present invention, a nitride-based light emitting diode and a method of manufacturing the same include a substrate, a GaN layer formed on the substrate, and n-type Al x Ga y In z N (0 ≦ x, y, z ≦ 1) on the GaN layer. An n-type lower contact layer having an optical waveguide structure, and formed on the n-type lower contact layer and composed of n-type Al x Ga y In z N (0≤x, y, z≤1) An active layer, a p-type upper contact layer formed on top of the active layer and composed of p-type Al x Ga y In z N (0≤x, y, z≤1), an exposed region on the n-type lower contact layer An n-type electrode formed on the; And a p-type electrode formed on the p-type upper contact layer. |
| priorityDate | 2012-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.