http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101297440-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0927 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0927 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 |
| filingDate | 2007-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101297440-B1 |
| titleOfInvention | Pun Junction and Morse Capacitor Hybrid Resistor Transistor |
| abstract | The present invention is directed to a high voltage semiconductor device, such as a RESULF transistor, with the improvements included to reduce the resistance in the on state. The apparatus includes a semiconductor substrate and a source region and a drain region provided in the semiconductor substrate. The source region and the drain region have a constant distance to each other, and the substrate includes a drift region between the drain region and the source region. The drift region includes a structure having at least two spaced apart trench capacitors connecting between the source and drain regions. And a stack having at least one of a first region of a first conductivity type, a second region of a second conductivity type, and a third region of a first conductivity type. The stack connects between the source and drain regions and between the first and second trench capacitors and electrically connects the first and second trench capacitors. When the device is in the on state, current flows between the source region and the drain region through the second region of the second conductivity type. And, when the device is in the off / blocking state, the second conductive region is consumed in four ways into the first and third regions of the stack and into the first and second trench capacitors. n n Resulf Transistors, Source, Drain, Stack, Trench, Drift |
| priorityDate | 2007-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.