http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101295198-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2005-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101295198-B1 |
| titleOfInvention | Photoresist composition |
| abstract | The photoresist of the invention comprises an acid reaction component added with one or more resins and a photoactive component. Preferred photoresists of the invention can provide desired iso-dense bias values for process microelectronic wafers. Particularly preferred photoresists of the present invention are chemically amplified positive-acting resists and include ester based solvents such as ethyl lactate or propylene glycol methyl ether acetate in addition to the acid reaction component.n n n Photoresist, Acid Reaction Component, Isodensity Bias Value |
| priorityDate | 2004-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 95.