| abstract |
The present invention includes a sintered body of an oxide having In and Sm as a main component, and at least one of the elements having a positive tetravalent or higher valency in the sputtering target and an sintered body of the oxide having In and Sm as a main component A sputtering target, which is doped at 20 atomic% or less with respect to the total amount of all cationic elements, is provided. n n Sputtering Target, Sintered Body, In, Sm |