http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101294968-B1

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filingDate 2006-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101294968-B1
titleOfInvention Etching solution composition and etching method using the same
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an etchant composition for collectively etching a metal single layer or a multi-layered film used as a gate electrode and a pixel electrode of a thin film transistor (TFT) of a flat panel display including a thin film transistor liquid crystal display device. 3 ) 3 1-10 wt%, 0.1-2 wt% of fluorine-containing compound, 2-15 wt% of HNO 3 , 0.5-5 wt% of HCl, and 68-96 wt% of water to form a thin film transistor of a flat panel display An etching liquid composition capable of collectively etching a metal single film or a multilayer film used as a wiring and a pixel electrode is provided.n n n n Molybdenum / Aluminum, Indium Oxide, Etch Composition
priorityDate 2006-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 40.