http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101291880-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-042 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2010-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101291880-B1 |
| titleOfInvention | Semiconductor Wafer Manufacturing Method |
| abstract | The method for manufacturing a semiconductor wafer is a) preparing a semiconductor wafer by cutting a silicon rod into a wafer; b) rounding the edges of the semiconductor wafer such that the semiconductor wafer includes flat surfaces at the front and back and sloped round surfaces at the edge regions; And c) polishing the front and back surfaces of the semiconductor wafer Wherein the polishing of the front side of the semiconductor wafer comprises chemical mechanical polishing using a polishing pad free of fixed abrasives, and the polishing of the back side of the semiconductor wafer includes a polishing material bonded and polished on the back of the semiconductor wafer. In each of the three stages, each pressurized polishing pad is used. In the first stage, a polishing agent free from solid phase is introduced between the polishing pad and the backside of the semiconductor wafer, while the second and third stages contain an abrasive material. One polishing agent is introduced and the polishing pressure is reduced to 8-15 psi in the first and second stages and 0.5 to 5 psi in the third stage. |
| priorityDate | 2009-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.