| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-033 |
| filingDate |
2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101287032-B1 |
| titleOfInvention |
Etching resistant antireflective coating composition |
| abstract |
The present invention provides a novel light absorbing composition useful for use as an antireflective coating (“ARC”) with an overcoated resist layer. The ARCs of the present invention are etch resistant and exhibit increased etch rates in standard plasma etchant. Preferred ARCs of the present invention have a very high oxygen content compared to conventional compositions. |
| priorityDate |
2000-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |