http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101286210-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2012-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aff8b8a07d3c3d6c58879ccf9785d77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28d167114f8501acdabd27271b982cdf |
| publicationDate | 2013-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101286210-B1 |
| titleOfInvention | Light emitting element and manufacturing method thereof |
| abstract | The present invention relates to a light emitting device capable of preventing a forward voltage from being increased while improving light output characteristics and a method of manufacturing the same. For example, the first conductivity type semiconductor layer; An active layer in contact with the first conductivity type semiconductor layer; A second conductivity type semiconductor layer in contact with the active layer and having a patterned groove formed on a surface opposite to the surface in contact with the active layer; A current blocking layer formed on the bottom of the groove; A transparent conductive layer formed along an opposite side of a surface of the second conductive semiconductor layer that contacts the active layer, a sidewall of the groove, and the current blocking layer; A reflective layer formed on an opposite surface of the transparent conductive layer in contact with the second conductive semiconductor layer; A support substrate formed on an opposite surface of the reflective layer in contact with the transparent conductive layer; And an electrode patterned on an opposite surface of the first conductive semiconductor layer in contact with the active layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102187471-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150081499-A |
| priorityDate | 2012-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.