http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101279965-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2008-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101279965-B1 |
| titleOfInvention | Copper wiring polishing CMP slurry composition and polishing method using the same |
| abstract | The present invention relates to a CMP slurry composition for polishing copper wiring, and more particularly, to a CMP slurry composition comprising ultrapure water, an abrasive, an oxidizing agent, a corrosion inhibitor, an organic acid, and an additive, wherein the acrylic acid-acrylamide copolymer is used as the additive. It relates to a copper wire polishing CMP slurry composition, characterized in that it is used at 0.001 to 0.04% by weight based on the total CMP slurry composition.n n n The CMP slurry composition of the present invention is useful in a copper wiring polishing process because the polishing rate ratio with respect to the copper wiring according to the polishing pressure is large and the polishing rate with respect to the barrier film is high.n n n Copper, polishing, CMP, slurry, acrylic acid-acrylamide copolymer, polishing rate ratio, barrier film, polishing rate |
| priorityDate | 2008-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.