http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101279495-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1824 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
| filingDate | 2010-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101279495-B1 |
| titleOfInvention | Method of manufacturing the photoelectric conversion device, the method of using the photoelectric conversion device, the production system of the photoelectric conversion device and the photoelectric conversion device manufacturing system |
| abstract | In the method of manufacturing this photoelectric conversion device, the photoelectric conversion device 10 in which the first photoelectric conversion unit 3 and the second photoelectric conversion unit 4 are sequentially stacked on the transparent conductive film 2 formed on the substrate 1 is provided. As a manufacturing method of the method, the first p-type semiconductor layer 31, the first i-type semiconductor layer 32, the first n-type semiconductor layer (in the plurality of first plasma CVD reaction chambers 62, 63, 64, 65) 33) and a second plasma before forming the second i-type semiconductor layer 42 by forming each of the second p-type semiconductor layer 41 and exposing the second p-type semiconductor layer 41 to an atmospheric atmosphere. A gas containing a p-type impurity is supplied into the CVD reaction chamber 72, and the second i-type semiconductor is disposed on the second p-type semiconductor layer 41 exposed to the atmosphere in the second plasma CVD reaction chamber 72. A layer 42 is formed, and a second n-type semiconductor layer 43 is formed on the second i-type semiconductor layer 42. |
| priorityDate | 2009-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.