http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101273971-B1

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filingDate 2004-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101273971-B1
titleOfInvention Semiconductor device and manufacturing method thereof
abstract An object of the present invention is to minimize the area occupied by the device to integrate a plurality of devices in a limited area so that the sensor device can be high output and miniaturized. In the present invention, a semiconductor having a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and a crystal structure used as an active layer on a plastic film substrate that can withstand the temperature during the mounting process such as the solder reflow process. High output and miniaturization are achieved by integrating an output amplifier circuit including a TFT having a film (typically a polycrystalline silicon film). According to the present invention, a sensor element capable of withstanding bending stress can be obtained.n n n n Optical sensor, amplification circuit, solder reflow, high power, miniaturization, bending stress
priorityDate 2003-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.