http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101273971-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J40-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
filingDate | 2004-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101273971-B1 |
titleOfInvention | Semiconductor device and manufacturing method thereof |
abstract | An object of the present invention is to minimize the area occupied by the device to integrate a plurality of devices in a limited area so that the sensor device can be high output and miniaturized. In the present invention, a semiconductor having a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and a crystal structure used as an active layer on a plastic film substrate that can withstand the temperature during the mounting process such as the solder reflow process. High output and miniaturization are achieved by integrating an output amplifier circuit including a TFT having a film (typically a polycrystalline silicon film). According to the present invention, a sensor element capable of withstanding bending stress can be obtained.n n n n Optical sensor, amplification circuit, solder reflow, high power, miniaturization, bending stress |
priorityDate | 2003-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.